1 2 3 4 5 6 sot-363 LMBT3906DW1T1 devic e packag e shipping orderin g inform a tion l mbt390 6 dw1t 1 sot36 3 3000 units/reel th e l mbt3906dw1t 1 devic e i s a spinoff of our popular sot23/sot323 threeleaded device. it is designed for general purpose amplifier applications and is housed in the sot363 sixleaded surface mount package. by putting two discrete devices in one package, this device is ideal for lowpower surface mount applications where board space is at a premium. ? h fe , 100300 ? low v ce(sat) , 0.4 v ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7inch/3,000 unit tape and reel ? device marking : l mbt 3906dw1t1 = a2 symbol value unit collectoremitter voltage v ceo 40 vdc collectorbase voltage v cbo 40 vdc emitterbase voltage v ebo 5.0 vdc collector current continuous i c 200 madc electrostatic discharge esd hbm>16000, mm>2000 v thermal characteristics characteristic symbol max unit total package dissipation (1) t a = 25 c p d 150 mw thermal resistance junction to ambient r ja 833 c/w junction and storage temperature range t j , t stg 55 to +150 c 1. device mounted on fr4 glass epoxy printed circuit board using the minimum 1. recommended footprint. rating maximum ratings q 1 q 2 (1) (2) (3) (4) (5) (6) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (2) v (br)ceo 40 vdc collectorbase breakdown voltage v (br)cbo 40 vdc emitterbase breakdown voltage v (br)ebo 5.0 vdc base cutoff current i bl 50 nadc collector cutoff current i cex 50 nadc on characteristics (2) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 60 80 100 60 30 300 collectoremitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) 0.25 0.4 vdc baseemitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 0.85 0.95 vdc smallsignal characteristics currentgain bandwidth product f t 250 mhz output capacitance c obo 4.5 pf input capacitance c ibo 10.0 pf 2. pulse test: pulse width 300 m s; duty cycle 2.0%. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h ie 2.0 12 k w voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h re 0.1 10 x 10 4 smallsignal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h fe 100 400 output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h oe 3.0 60 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k w , f = 1.0 khz) nf 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = 0.5 vdc) t d 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) t r 35 ns storage time (v cc = 3.0 vdc, i c = 10 madc) t s 225 ns fall time (i b1 = i b2 = 1.0 madc) t f 75 ns product specification LMBT3906DW1T1 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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